Band-Edge Energies and Photoelectrochemical Properties of n-Type Al[sub x]Ga[sub 1−x]N and In[sub y]Ga[sub 1−y]N Alloys
Source abstract
Abstract
We studied photoelectrochemical properties of for the first time, and compared with those of . The conduction band-edge energy of n-type decreased with Al composition, however the valence band-edge energy did not significantly change. Saturated photocurrent obtained from dynamic photocurrent-voltage measurements under illumination also decreased with increasing Al composition. Greater Al composition also shifted the onset voltage to more negative direction. These phenomena can be explained by the changes of bandgap and band-edge energies with Al composition.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · Semiconductor materials and devices · GaN-based semiconductor devices and materials
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