Influence of Annealing on Excitation of Terbium Luminescence in YAlO[sub 3] Films Deposited onto Porous Anodic Alumina

Terbium-doped yttrium–aluminum oxide films were synthesized by spin-on deposition on porous anodic alumina grown on a silicon wafer and annealed from 400 to . An influence of the annealing temperature on the terbium photoluminescence (PL) was studied using two-dimensional PL excitation and time-resolved spectroscopy. Further, a comparison of thermal quenching data for the most intensive luminescence band of ions was performed for 10–300 K. From the resultant data, the mechanisms of Tb excitation and its dependence on the annealing conditions are proposed and discussed.