journal article·1976-10-01

The Dielectric Breakdown of Anodic Aluminum Oxide

H. J. de Wit, Ch. Wijenberg, C. Crevecoeur

Publisher page

Abstract

Nonshorting breakdowns of anodic alumina films, 200–2500Å thick, have been measured. These measurements reveal the existence of a thickness‐independent breakdown field which is close to the anodizing field. The existing theories, which make use of electron avalanching, cannot explain these facts and it is suggested that the breakdown is initiated by ionic movement and that it is related to the anodizing process.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Semiconductor materials and devices · Anodic Oxide Films and Nanostructures · Copper Interconnects and Reliability

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Affiliations

Philips Research Laboratories, Eindhoven, The Netherlands

References

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