CuIn[sub 1−x]Ga[sub x]Se[sub 2] Absorber Layer Fabricated by Pulse-Reverse Electrodeposition Technique for Thin Films Solar Cell

A single phase of (CIGS) polycrystalline thin films was successfully fabricated by the pulse-reverse electrodeposition technique. In this study, a multipulse sequence of potentials with varying amplitude and duration time was used to fabricate CIGS thin film, in which the electrolyte was composed of , , , , Na-citric, and LiCl. Then these as-deposited films were annealed in argon atmosphere. The crystalline structure of the thin film was characterized by X-ray diffractometer. The results revealed that thin films fabricated by the pulse-reverse electrodeposition technique only produced a chalcopyrite structure, with no occurrence of secondary phases. The identification of secondary microcrystalline phases and vibration modes of chalcopyrite and was used by a micro-Raman spectrum. The morphological features were characterized by scanning electron microscopy, which showed that the films were dense and smooth compared with that fabricated by a one-step electrodeposition technique without a multipulse step. The thickness and roughness of the CIGS thin films were estimated by an Alpha-Step profilometer. Finally, the carrier type of the CIGS thin film is of a p-type nature as confirmed by electrochemical measurement.