Assessment of the Surface Quality of SIMOX Wafers by UV Reflectance
Source abstract
Abstract
The surface quality of SIMOX wafers implanted under various conditions of implant temperature, voltage, and dose has been characterized in terms of surface contamination, roughness, and amorphization by UV reflectance spectroscopy.
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Semiconductor materials and devices · GaN-based semiconductor devices and materials · Nanowire Synthesis and Applications
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Affiliations
Paul Scherrer Institut, Badenerstrasse 569, CH‐8048 Zürich, Switzerland
SRI International, David Sarnoff Research Center, Princeton, New Jersey 08540
References
Reference metadata was not supplied for this record.