Impact of Oxidation on Ge2Sb2Te5and GeTe Phase-Change Properties
Source abstract
Abstract
Effects of Ge 2 Sb 2 Te 5 and GeTe oxidation on their phase-change properties were studied by optical measurements and Parallel Angle Resolved X-ray Photoelectron Spectroscopy (PARXPS). The influence of oxygen on the active material was depicted in order to explain variations of the phase-change properties. The surface analysis evidenced a two-steps oxidation involving the formation of germanium and antimony oxides then tellurium oxide. A smooth surface sputtering allowed physically distinguishing the different oxides on GeTe sample overlayer and gave information about oxidation mechanisms. A significant drift of crystallization temperatures and activation energies were observed after 12 months air exposure time that points out the influence of the phase-change materials oxidation on their active properties.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (30)
Show source-provided references
1. 10.1147/rd.524.044910.1147/rd.524.0449 ↗
2. 10.1016/S1369-7021(08)70118-410.1016/S1369-7021(08)70118-4 ↗
3. 10.1016/j.mee.2008.08.00410.1016/j.mee.2008.08.004 ↗
4. 10.1016/j.jnoncrysol.2007.09.11110.1016/j.jnoncrysol.2007.09.111 ↗
5. 10.1063/1.319167010.1063/1.3191670 ↗
6. 10.1109/LED.2010.204413610.1109/LED.2010.2044136 ↗
7. 10.1016/j.apsusc.2006.03.09410.1016/j.apsusc.2006.03.094 ↗
8. 10.1063/1.34294510.1063/1.342945 ↗
9. 10.1103/PhysRevB.73.21410510.1103/PhysRevB.73.214105 ↗
10. 10.1063/1.318607710.1063/1.3186077 ↗
11. 10.1063/1.223621610.1063/1.2236216 ↗
12. 10.1016/j.apsusc.2010.06.03910.1016/j.apsusc.2010.06.039 ↗
13. 10.1063/1.219432710.1063/1.2194327 ↗
14. Song Y. J. Ryoo K. C. Hwang Y. N. Jeong C. W. Lim D. W. Park S. S. Kim J. I. Kim J. H. Lee S. Y. Kong J. H. Ahn S. J. Lee S. H. Park J. H. Oh J. H. Oh Y. T. Kim J. S. Shin J. M. Park J. H. Fai Y. Koh G. H. Jeong G. T. Kim* R. H. Lim* H. S. Park* I. S. Jeong H. S. Kim K. , 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers, 118 (2006).10.1109/VLSIT.2006.1705245 ↗
15. 10.1063/1.291295810.1063/1.2912958 ↗
16. 10.1016/j.mee.2008.06.01210.1016/j.mee.2008.06.012 ↗
17. Moulder J. F. Stickle W. F. Sobol P. E. Bomben K. D. , Handbook of X-ray Photoelectron Spectroscopy, Perkin-Elmer Corporation, Physical Electronics Division (1992). ISBN 0-9627026-2-5
18. 10.6028/jres.057.02610.6028/jres.057.026 ↗
19. de Boer F. R. Boom R. Mattens W. C. M. Miedema A. R. Niessen A. K. , Cohesion in Metals: Transition Metal Alloys, Scientific Pub., Co., New York, USA (1988).
20. 10.1016/j.elspec.2005.06.00410.1016/j.elspec.2005.06.004 ↗
21. 10.1002/sia.74021030210.1002/sia.740210302 ↗
22. 10.1063/1.35313210.1063/1.353132 ↗
23. Fantini A. Sousa V. Perniola L. Gourvest E. Bastien J. C. Maitrejean S. Braga S. Pashkov N. Bastard A. Hyot B. Roule A. Persico A. Feldis H. Jahan C. Nodin J. F. Blachier D. Toffoli A. Reimbold G. Fillot F. Pierre F. Annunziata R. Benshael D. Mazoyer P. Vallée C. Billon T. Hazart J. De Salvo B. Boulanger F. , IEEE Int. Electron Devices Meet 2010, Tech. Dig. Book Series: Int. Electron. Devices Meet. 4 (2010).
24. 10.1063/1.34862010.1063/1.348620 ↗
25. 10.1143/JJAP.38.477510.1143/JJAP.38.4775 ↗
26. 10.1016/j.sse.2011.06.02910.1016/j.sse.2011.06.029 ↗
27. Friedrich · J. Appl. Phys. · 2000 · 87 · 9
28. 10.1016/j.tsf.2005.09.20110.1016/j.tsf.2005.09.201 ↗
29. Matsuzaki N. Kurotsuchi K. Matsui Y. Tonomura O. Yamamoto N. Fujisaki Y. Kitai N. Takemura R. Osada K. Hanzawa S. Moriya H. Iwasaki T. Kawahara T. Takaura N. Terao M. Matsuoka M. Moniwa M. , IEE Int. Electron Devices Meet. 2005, Tech. Digest Book Series: Int. Electron Devices Meet 757 (2005).
30. 10.1063/1.37080310.1063/1.370803 ↗