Electrodeposition of Silicon from a Nonaqueous Solvent

Electroplating of silicon from solutions of , , , , , , and in tetrahydrofuran, using , TBAP, or TBAB as supporting electrolyte has been studied Si‒C, Si‒O, and Si‒N bonds are not reduced. Cyclic voltammetry shows a reduction peak, followed by passivation, for the halogenosilanes. Potentiostatic and galvanostatic deposition on Pt, Au, Ni, Cu glassy carbon, or ITO glass yields smooth layers up to 0.25 μm. Thicker layers have cracks. Auger spectroscopy shows C (∼8), O (∼8), and Cl (∼1.5) as impurities (atomic percent).