Modeling the Bottom-Up Filling of Through-Silicon vias Through Suppressor Adsorption/Desorption Mechanism
Source abstract
Abstract
A model for copper electroplating of through-silicon vias (TSV) is proposed based on the suppressor adsorption/desorption mechanism, with special emphasis on the bottom-up filling of these structures. The proposed model is applicable for both 2-component (suppressor and accelerator) and 1-component (suppressor only) Cu plating chemistries. Numerical simulation was performed for the filling of 5 μm (diameter) × 40 μm (depth) vias. Simulated Cu profiles and the corresponding dependencies on additive concentration are confronted with existing experimental results.
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Research context
OpenAlex topics: Electrodeposition and Electroless Coatings · Semiconductor materials and interfaces · Electronic Packaging and Soldering Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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