Chemical Bath Deposition of CdS Thin Films: Electrochemical In Situ Kinetic Studies
Source abstract
Abstract
Chemical bath deposition of cadmium sulfide thin films from solutions has been studied in situ using electrochemical open‐circuit potential change (EOCPC) measurements. An explanation of the EOCPC dependence with film thickness in terms of space‐charge region theory has been reported. The effect of various parameters on the growth and on the film quality is presented (temperature, concentration of reacting species, and film thickness). The structural and electrical properties of thin films prepared by this method have been studied. The x‐ray diffraction analysis shows evidence that the orientation perpendicular to the substrate surface is highly preferential confirming that the growth evolves from nucleation on the substrate. From resistivity and EOCPC measurements the following values of the electrical properties of the material have been obtained: dark conductivity about 10 −7 (Ω cm) −1 , photoconductivity about 10 −2 (Ω cm) −1 , carrier concentration about 10 −13 cm −3 , and carrier mobility about 2 cm 2 V −1 s −1 .
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
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Affiliations
Instituto de Energías Renovables, Ciemat, E‐28040 Madrid, Spain
References
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