A Model of Copper CMP
Source abstract
Abstract
A model of copper chemical mechanical polishing (CMP) based on methods of chemical kinetics is presented which includes both chemical and mechanical processes. This CMP model explains observed patterns in removal rates for peroxide and nonperoxide-based slurries as a function of oxidizer concentration, polishing pressure and speed, etchant concentration, and pH.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Advanced machining processes and optimization · Advanced Machining and Optimization Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References
Reference metadata was not supplied for this record.