Study of CdS Epitaxial Films Chemically Deposited from Aqueous Solutions on InP Single Crystals
Source abstract
Abstract
Epitaxial growth of cadmium sulfide on single crystals is achieved by chemical bath deposition (CBD) in ammonia solutions at near room temperature. A better understanding of the correlations between the deposition parameters (temperature, bath composition) and the epitaxial quality is obtained by using electron diffraction and transmission techniques, x‐ray diffraction, in combination with Raman spectroscopy. They are supplemented by electrochemical impedance and photocurrent experiments which give information on energetic structures between and . Direct relations between the substrate properties and the growth habits of the film (hexagonal vs. cubic, epitaxial vs. polycrystalline) are found.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Semiconductor materials and interfaces
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Affiliations
UPR 15 du CNRS, “Physique des Liquides et Electrochimie,” Université Pierre et Marie Curie, 75252 Paris Cedex 05, France
Laboratoire d'Electrochimie et de Chimie Analytique, unité associée au CNRS, Ecole Nationale Supérieure de Chimie de Paris, 75231 Paris Cedex 05, France
References
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