Effect of pH on CMP of Copper and Tantalum
Source abstract
Abstract
Polishing behavior of copper and tantalum using aqueous slurries containing alumina and silica abrasives with and without /glycine has been investigated at different pH values. It was observed that pH-dependent changes in the surface characteristics of the films being polished lead to significant variation in the copper and tantalum removal rates. Some of the surface characteristics that change with the slurry pH include the nature of the passivating layer formed on the metal surface and the hardness of such layers. It is also shown that a favorable copper to tantalum polish rate selectivity can be obtained by adjusting the slurry pH. © 2004 The Electrochemical Society. All rights reserved.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Advanced Machining and Optimization Techniques · Advanced machining processes and optimization
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References
Reference metadata was not supplied for this record.