Mechanism of CVD Thin Film SnO2 Formation

The kinetic mechanism of CVD deposition has been studied for ( i ) reaction at 675°–940°C for and , ( ii ) reaction at 400°–807°C for and , and ( iii ) reaction at 425°–578°C for and . In combination with the available literature data, the results of the present investigation have been interpreted to show atomic oxygen as the adsorbed species and tin‐containing gas as the gaseous reactant in both the direct oxidation reactions (Rideal‐Eley mechanism). The hydrolysis reaction is the only thermally unactivated one in the group and proceeds by the collision of molecules on four adsorbed (symmetrically) water molecules on the surface. The open tube cold wall horizontal reactor has been established as an ideal equipment for the kinetic mechanism delineation of all CVD reactions.