An Etch for Delineation of Defects in Silicon

An investigation of the system shows that preferential etching of crystal defects on silicon surfaces is very sensitive to the concentration ratio of to . This leads to development of a new etch consisting of one part by volume of and one part of 49% . This etch can delineate a wide variety of crystal defects with sharp definition. The shape of dislocation etch pits is uniquely determined by the orientation of wafer surfaces and dislocation lines.