Von Mises Stress in Chemical‐Mechanical Polishing Processes
Source abstract
Abstract
In this paper we ( i ) describe a model for the stress distribution across a wafer during chemical‐mechanical polishing, which is solved using I‐DEAS (a commercial software package) and ( ii ) summarize the predicted effects of carrier film and pad compressibility on polishing nonuniformity. Results indicate that ( i ) the Von Mises stress correlates with polishing nonuniformity, while the normal stress does not correlate with the nonuniformity and ( ii ) CMP uniformity improves with decreasing polishing pad and carrier film compressibility.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Advanced machining processes and optimization · Metal Forming Simulation Techniques
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Affiliations
Department of Chemical, Bio, and Materials Engineering, Arizona State University, Tempo, Arizona 85287‐6006
Center for Solid State Electronics Research, Arizona State University, Tempo, Arizona 85287‐6006
IPEC Planar, Phoenix, Arizona 85034
References
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