Solid Solubility and Diffusion Coefficients of Boron in Silicon

The solid solubility and diffusion coefficients of boron in silicon have been determined as a function of temperature over the range of 700°–1151°C, by anodically sectioning diffused layers. The solid solubility was found to vary from at 700°C to at 1151°C. The diffusion coefficients for impurity levels below 10 18 atoms/cm 3 may be represented by . The diffusion coefficients above 10 18 atoms/cm 3 were found to be dependent on the impurity level.