journal article·1980-02-01

Solution Growth of CdSe and PbSe Films

R. C. Kainthla, D. K. Pandya, K. L. Chopra

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Abstract

Cadmium selenide and lead selenide films have been deposited by a solution growth technique on single crystal germanium and silicon, glass, mica, and copper substrates. The effect of bath parameters ( p H, temperature, and relative concentration of reactants) and the nature of the substrate on the rate of deposition and terminal thickness has been established. The structure of the films has also been studied. Based on the experimental results, a growth model has been proposed.
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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Semiconductor materials and interfaces

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Affiliations

Department of Physics, Indian Institute of Technology, Delhi, New Delhi 110029, India

References

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