Oxide Growth on Etched Silicon in Air at Room Temperature

Oxide growth on etched silicon wafers at room temperature was studied as a function of etching procedure, wafer orientation, dopant concentration, and exposure to ultraviolet light. An impurity film was rapidly deposited on the silicon surface after etching with hydrofluoric acid. Impurity adsorption was distinguished from oxide growth by x‐ray photoelectron spectroscopy (ESCA). The impurity film greatly reduced the initial oxide growth rate when compared with oxide growth on a cleaved silicon surface. The thickness of oxide films formed on etched surfaces was determined and compared using ESCA and ellipsometry.