The Oxidation of Shaped Silicon Surfaces
Source abstract
Abstract
Nonplanar silicon surfaces were prepared and oxidized at 900°–1100°C and the oxide morphology was studied by transmission electron microscopy of thin sections. A 30% decrease in oxide thickness at silicon step edges following 900° and 950°C wet oxidation is attributed to the effect of locally compressive intrinsic stress within the oxide on the solubility of oxygen. Oxidation inhibition becomes less at higher temperatures due to the relief of stress (during growth) by viscous flow of the oxide.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications · Semiconductor materials and devices
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Affiliations
Bell Laboratories, Murray Hill, New Jersey 07974
References
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