Synergistic Control on Co/Cu Galvanic Corrosion and Its Application for Co Barrier Chemical Mechanical Planarization in Alkaline Slurry
Source abstract
Abstract
Selective chelation and protective film formation were synergistically combined to achieve Co/Cu galvanic corrosion control. Chelating agent imionodisuccinic acid and protective film formation agent benzotriazole are strategically chosen for fulfilling the above proposed task in alkaline solution for Co barrier chemical mechanical planarization (CMP). Chronopotentiometry and linear dynamic potential polarization methods are used to investigate the thermodynamics and kinetics of Co and Cu corrosion. A synergistic control of Co/Cu corrosion was accomplished by judiciously balancing the power of selective chelation and protective film formation. This systematic approach can be expanded to systematically design other metal CMP slurries to fulfil the desired polishing performance.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Advanced machining processes and optimization · Advanced Machining and Optimization Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (41)
Show source-provided references
1. Chemical mechanical planarization: Slurry chemistry, materials and mechanisms10.1021/cr900170z ↗
2. Electrochemical behavior of copper and cobalt in post-etch cleaning solutions10.1016/j.mee.2009.01.035 ↗
3. Bottom-up filling of submicrometer features in catalyst-Enhanced chemical vapor deposition of copper10.1149/1.1640633 ↗
4. Characterization of ‘ultrathin-Cu’/Ru(Ta)/TaN liner stack for copper interconnects10.1109/LED.2010.2047934 ↗
5. Potassium tartrate as a complexing agent for chemical mechanical polishing of Cu/Co/TaN barrier linear stack in H2O2 based alkaline slurries10.1016/j.mssp.2019.104883 ↗
6. Co capping layers for Cu low-k interconnects10.1016/j.mee.2011.04.017 ↗
7. Tungsten and cobalt metallization: a material study for MOL local interconnects
8. Cobalt bottom-up contact and via prefill enabling advanced Logic and DRAM technologies
9. Electroless deposited cobalt-tungsten-boron capping barrier metal on damascene copper interconne ction10.1149/1.1860512 ↗
10. Cobalt polishing with reduced galvanic corrosion at copper/cobalt interface using hydrogen peroxide as an oxidizer in colloidal silica-based slurries10.1149/2.073206jes ↗
11. A study of cobalt galvanic and pitting corrosion with combination of BTA and PMP10.1149/2.0141908jss ↗
12. Chemical and mechanical aspects of a Co-Cu planarization scheme based on an alkaline slurry formulation10.1149/2.0271602jss ↗
13. Citric acid as a complexing agent in chemical mechanical polishing slurries for cobalt films for interconnect applications10.1149/2.0111709jss ↗
14. Electrochemical behavior of cobalt in aqueous solutions of different pH10.1023/A:1003893122201 ↗
15. Effect of 1,2,4-triazole on galvanic corrosion between cobalt and copper in CMP based alkaline slurry10.1088/1674-4926/39/4/046001 ↗
16. Chemical mechanical polishing of chemical vapor deposited Co films with minimal corrosion in the Cu/Co/Mn/SiCOH patterned structures10.1149/2.0171705jss ↗
17. Controlling galvanic corrosion with oxalic acid and imidazole for chemical mechanical planarization of cobalt-copper interface10.1149/2162-8777/ac6d72 ↗
18. Effect of glycine and hydrogen peroxide on chemical-mechanical planarization of copper10.1016/S0040-6090(02)00989-6 ↗
19. High-selectivity damascene chemical mechanical polishing10.1016/j.tsf.2005.07.063 ↗
20. Role of 1,2,4-Triazole in Co/Cu removal rate selectivity and galvanic corrosion during barrier CMP10.1149/2.0091712jss ↗
21. Potassium oleate as a dissolution and corrosion inhibitor during chemical mechanical planarization of chemical vapor deposited Co Films for interconnect applications10.1149/2.0251712jss ↗
22. The effect of hydroxyethylidene diphosphonic acid on the chemical mechanical polishing of cobalt in H2O2 based alkaline slurries10.1149/2162-8777/ab80b2 ↗
23. Uses of scanning electrochemical microscopy for the characterization of thin inhibitor films on reactive metals: The protection of copper surfaces by benzotriazole10.1016/j.electacta.2010.08.020 ↗
24. Theoretical and electrochemical analysis on inhibition effect of benzotriazole and 1,2,4-triazole on cobalt surface10.1016/j.colsurfa.2020.124516 ↗
25. Potassium tartrate as a complexing agent for chemical mechanical polishing of Cu/Co/TaN barrier liner stack in H2O2 based alkaline slurries10.1016/j.mssp.2019.104883 ↗
26. Experimental and density functional theory study of complexing agents on cobalt dissolution in alkaline solutions10.1016/j.electacta.2021.137977 ↗
27. Studies on biodegradable chelating ligands: complexation of iminodisuccinic acid (ISA) with Cu(II), Zn(II), Mn(II), and Fe(III) ions in aqueous solution10.1039/B303372B ↗
28. Chemical speciation simulation used to assess the efficiency of environment-friendly EDTA alternatives for use in the pulp and paper industry10.1016/S0020-1693(02)00924-6 ↗
29. Chemical and mechanical aspects of a Co-Cu planarization scheme based on an alkaline slurry formulation10.1149/2.0271602jss ↗
30. New insight in the behaviour of Co-H2O system at 25–150 °C, based on revised Pourbaix diagrams10.1016/j.corsci.2007.07.002 ↗
31. Inhibition of cobalt active dissolution by benzotriazole in slightly alkaline bicarbonate aqueous media10.1016/j.electacta.2007.01.057 ↗
32. Role of the functional groups of complexing agent in copper slurries10.1149/1.2199307 ↗
33. In situ STM study of the initial stages of oxidation of Cu(111) in aqueous solution10.1016/S0039-6028(00)00442-8 ↗
34. Review on copper chemical-mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI)—An electrochemical perspective10.1016/j.electacta.2006.07.039 ↗
35. Role of 1,2,4-triazole as a passivating agent for cobalt during post-chemical mechanical planarization cleaning10.1149/2.093403jes ↗
36. Cleaning solutions for ultrathin Co barriers for advanced technology nodes10.1149/2.0351709jss ↗
37. Interpretation of the X-ray photoemission spectra of cobalt oxides and cobalt oxide surfaces10.1016/0039-6028(76)90026-1 ↗
38. Investigation of Cu-BTA complex formation during Cu chemical mechanical planarization process10.1016/j.apsusc.2016.05.106 ↗
39. On the protective action of 1,2,3-benzotriazole derivative films against copper corrosion10.1016/S0010-938X(97)00022-X ↗
40. Chemical roles on Cu-slurry interface during copper chemical mechanical planarization10.1016/j.apsusc.2013.12.150 ↗
41. Chemical effects on the tribological behavior during copper chemical mechanical planarization10.1016/j.matchemphys.2014.12.033 ↗