journal article·2019Open access

In Situ Raman Spectroscopy on Silicon Nanowire Anodes Integrated in Lithium Ion Batteries

Andreas Krause, Olga Tkacheva, Ahmad Omar, Ulrike Langklotz, Lars Giebeler, Susanne Dörfler, F. Fauth, Thomas Mikolajick, Walter M. Weber

Abstract

Rapid decay of silicon anodes during lithiation poses a significant challenge in application of silicon as an anode material in lithium ion batteries. In situ Raman spectroscopy is a powerful method to study the relationship between structural and electrochemical data during electrode cycling and to allow the observation of amorphous as well as liquid and transient species in a battery cell. Herein, we present in situ Raman spectroscopy on high capacity electrode using uncoated and carbon-coated silicon nanowires during first lithiation and delithiation cycle in an optimized lithium ion battery setup and complement the results with operando X-ray reflection diffraction measurements. During lithiation, we were able to detect a new Raman signal at 1859 cm −1 especially on uncoated silicon nanowires. The detailed in situ Raman measurement of the first lithiation/delithiation cycle allowed to differentiate between morphology changes of the electrode as well as interphase formation from electrolyte components.
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Research context

OpenAlex topics: Advancements in Battery Materials · Advanced Battery Technologies Research · Advanced Battery Materials and Technologies

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References (58)

Show source-provided references
1. Nagaura T. Tozawa K. , 9, 20 (1990).
2. 10.1016/j.jpowsour.2012.10.06010.1016/j.jpowsour.2012.10.060 ↗
3. 10.1016/j.jclepro.2015.11.01110.1016/j.jclepro.2015.11.011 ↗
4. 10.1016/j.rser.2017.05.00110.1016/j.rser.2017.05.001 ↗
5. 10.1149/1.240986210.1149/1.2409862 ↗
6. 10.1039/c1ee01918j10.1039/c1ee01918j ↗
7. 10.1149/1.165242110.1149/1.1652421 ↗
8. 10.1149/1.348937410.1149/1.3489374 ↗
9. 10.1103/PhysRevLett.107.04550310.1103/PhysRevLett.107.045503 ↗
10. 10.1016/j.pmatsci.2014.02.00110.1016/j.pmatsci.2014.02.001 ↗
11. 10.1021/nn204476h10.1021/nn204476h ↗
12. 10.1002/anie.20080435510.1002/anie.200804355 ↗
13. 10.1038/nnano.2007.41110.1038/nnano.2007.411 ↗
14. 10.1038/nnano.2012.3510.1038/nnano.2012.35 ↗
15. 10.1016/j.nantod.2012.08.00410.1016/j.nantod.2012.08.004 ↗
16. 10.1021/cr800344k10.1021/cr800344k ↗
17. 10.1016/j.jpowsour.2015.04.08410.1016/j.jpowsour.2015.04.084 ↗
18. 10.1063/1.481326310.1063/1.4813263 ↗
19. 10.1039/C4FD00079J10.1039/C4FD00079J ↗
20. 10.1149/2.1301610jes10.1149/2.1301610jes ↗
21. 10.1021/acs.jpcc.5b1255110.1021/acs.jpcc.5b12551 ↗
22. 10.1016/j.electacta.2006.06.03410.1016/j.electacta.2006.06.034 ↗
23. 10.1016/j.elecom.2008.11.00610.1016/j.elecom.2008.11.006 ↗
24. 10.1016/j.jpowsour.2014.01.09210.1016/j.jpowsour.2014.01.092 ↗
25. 10.1016/j.nanoen.2016.02.00510.1016/j.nanoen.2016.02.005 ↗
26. 10.1002/adma.20080375410.1002/adma.200803754 ↗
27. 10.1038/srep2798210.1038/srep27982 ↗
28. Aichmayr G. , in 2007 IEEE Symposium on VLSI Technology, p. 186 (2007).
29. 10.1017/S088571561300090010.1017/S0885715613000900 ↗
30. 10.1107/S160057671502216510.1107/S1600576715022165 ↗
31. 10.1016/j.jpowsour.2014.12.04110.1016/j.jpowsour.2014.12.041 ↗
32. 10.1103/PhysRevB.61.1409510.1103/PhysRevB.61.14095 ↗
33. 10.1002/pssc.20151011410.1002/pssc.201510114 ↗
34. 10.1023/A:100515122089310.1023/A:1005151220893 ↗
35. 10.1149/1.204386910.1149/1.2043869 ↗
36. 10.1139/v75-19110.1139/v75-191 ↗
37. 10.1016/j.jpowsour.2009.01.00710.1016/j.jpowsour.2009.01.007 ↗
38. 10.1016/j.physe.2005.12.03010.1016/j.physe.2005.12.030 ↗
39. 10.1063/1.9905410.1063/1.99054 ↗
40. 10.1016/j.nanoen.2016.02.00510.1016/j.nanoen.2016.02.005 ↗
41. 10.1016/j.electacta.2010.05.07210.1016/j.electacta.2010.05.072 ↗
42. 10.1149/2.1241707jes10.1149/2.1241707jes ↗
43. 10.1021/jp409762m10.1021/jp409762m ↗
44. 10.1021/nl200412p10.1021/nl200412p ↗
45. 10.1016/j.jpowsour.2006.05.04910.1016/j.jpowsour.2006.05.049 ↗
46. 10.1039/c2cc31712e10.1039/c2cc31712e ↗
47. 10.1016/j.susc.2010.12.01910.1016/j.susc.2010.12.019 ↗
48. 10.1021/la203712s10.1021/la203712s ↗
49. 10.1002/aenm.20170071510.1002/aenm.201700715 ↗
50. 10.1149/1.303223010.1149/1.3032230 ↗
51. 10.1103/PhysRevB.61.1682710.1103/PhysRevB.61.16827 ↗
52. 10.1063/1.167475410.1063/1.1674754 ↗
53. 10.1016/S0022-2860(01)00703-710.1016/S0022-2860(01)00703-7 ↗
54. 10.1007/BF0304583110.1007/BF03045831 ↗
55. 10.1021/cm303399v10.1021/cm303399v ↗
56. 10.1016/0038-1098(84)90126-110.1016/0038-1098(84)90126-1 ↗
57. 10.1016/S0022-1139(02)00323-810.1016/S0022-1139(02)00323-8 ↗
58. 10.1016/0009-2614(79)80122-010.1016/0009-2614(79)80122-0 ↗