The Etching Mechanisms of SiO2 in Hydrofluoric Acid
Source abstract
Abstract
The different equilibria in and solutions are examined and the etching reaction of is investigated as a function of the different species present in the solution. A new model for the etching mechanism of is developed based on the existence of the dimer of , .
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Structural Analysis and Optimization · Icing and De-icing Technologies
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Affiliations
IMEC, B‐3001 Leuven, Belgium
Department of Chemistry, Katholieke Universiteit Leuven, B‐3001 Leuven, Belgium
References
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