Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE
Source abstract
Abstract
Growth and luminescence properties of Mg‐doped prepared by metal‐organic vapor phase epitaxy, in which or is used as the Mg source gas, are reported for the first time. It was found that the Mg concentration in is proportional to the flow rate of the Mg source gas; the doping efficiency of Mg into is independent of the substrate temperature from 850° to 1040°C; and Mg in acts as an acceptor and forms blue luminescence centers. By using , an efficient near‐UV and blue LED can be fabricated.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties
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Affiliations
Nagoya University, Department of Electronics, Furo‐cho, Nagoya 464‐01, Japan
References
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