Mott‐Schottky Analysis of Nanometer‐Scale Thin‐Film Anatase TiO2
Source abstract
Abstract
Smooth nanometer‐scale films of anatase on indium‐tin oxide substrates (ITO) are obtained by electron‐beam evaporation of reduced powder. Mott‐Schottky analysis shows an abrupt change in slope when the depletion layer reaches the /ITO interface. An electrostatic model is derived, which gives a quantitative description of the observed change in slope. From the potential at which the slope changes, the dielectric constant of anatase could be accurately determined. A value of 55 is found, which is significantly lower than those reported for anatase .
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · ZnO doping and properties · Ga2O3 and related materials
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Affiliations
Laboratory for Applied Inorganic Chemistry, Delft University of Technology, 2628 BL Delft, The Netherlands
References
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