journal article·2026-07-01Open access

Alumina precipitation in rutile single crystal saturated with alumina under thermal tensile stress

Yutaka Ohya, Wingki Mey Hendra, Chika Takai-Yamashita

Abstract

Alumina precipitation behavior in rutile single crystals saturated with alumina was investigated using diffusion couples composed of rutile a-plane bonded to corundum c-plane. During annealing at 1200–1300 °C, alumina dissolved into rutile according to the defect reaction, Al2O3 → 2Al′Ti + 3OO × + VO⋅⋅. Subsequent cooling generated supersaturation of alumina and, simultaneously, produced significant tensile stress along the rutile c-axis due to the mismatch in thermal contraction between rutile and corundum. This stress induced dislocation formation having slip system, such as (011)[011]. In the air-quenched samples, supersaturated oxide-ion vacancies reacted with screw dislocations directed [101] and [101] on the (100) plane, to form rectangular helical and/or zigzag dislocations. Alumina precipitated along these modified dislocations as corundum. The direction of the rectangular helical and zigzag modifications associated with the pseudo-hexagonal oxide-ion sublattice of rutile. In contrast, slow cooling at 10 °C/min produced four-lobed corundum precipitates aligned with the rutile a- and b-axes, corresponding to half of the eight-lobed morphology. These results demonstrate that thermal stress, cooling rate, and crystallographic orientation jointly control modification of dislocation structures and alumina precipitation morphology in alumina-saturated rutile.
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Research context

OpenAlex topics: Advanced ceramic materials synthesis · High-Velocity Impact and Material Behavior · Electromagnetic Effects on Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemistry and Biomolecular Science, Gifu University

Advanced Ceramics Research Center, Nagoya Institute of Technology

Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

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