Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation
Source abstract
Abstract
The synthesis of platinum silicide at a Pt/SiOx interface by photon irradiation was investigated using transmission electron microscopy. A platinum silicide, Pt₂Si, was successfully formed at the Pt/SiOx interface by irradiation with 680 and 140 eV photons, but not by irradiation with 80 eV photons. Silicide formation was also induced by irradiation with electrons of energy 75 keV. The amount of silicide formed by photon irradiation was lower than the amount obtained by electron irradiation. Silicide formation by both photon and electron irradiation was accompanied by Si depletion in amorphous SiOx. The experimental results indicate that silicide formation is induced by electronic excitation. A possible mechanism for silicide formation is proposed on the basis of the results.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and interfaces · Ion-surface interactions and analysis · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (20)
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