journal article·2019-10Open access

A novel liquid-mediated nucleation mechanism for explosive crystallization in amorphous germanium

Garth C. Egan, Tae Wook Heo, Amit Samanta, Geoffrey H. Campbell

Acta Materialia· Volume 179

Abstract

Abstract We report a novel mechanism for explosive crystallization in amorphous germanium (a-Ge), which operates through liquid-mediated nucleation occurring under extreme thermal gradient conditions. The crystallization kinetics of sputter-deposited films with thicknesses ranging from 30 to 150 nm were characterized using in situ movie-mode dynamic transmission electron microscopy (MM-DTEM). After localized heating from a short laser pulse, explosive liquid phase nucleation (LPN) was observed to occur during the early stage ( 50 nm) films deposited on silicon nitride substrates. The crystallization front propagated at ∼12–15 m/s and produced nanocrystalline microstructure with ∼50 nm grains. A mechanism involving the existence of a relatively thick (>100 nm) transient liquid layer and a high nucleation rate is proposed to explain the behavior. The key thermodynamic and kinetic features as well as the feasibility of the mechanism are further explored by employing parametric and systematic phase-field modeling and simulations.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: nanoparticles nucleation surface interactions · Material Dynamics and Properties · Solidification and crystal growth phenomena

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (42)

Show source-provided references
1. Nickel · 2003
2. Progress in laser-crystallized thin-film polycrystalline silicon solar cells: intermediate layers, light trapping, and metallization10.1109/JPHOTOV.2013.2280016 ↗
3. Relationship between fluence gradient and lateral grain growth in spatially controlled excimer laser crystallization of amorphous silicon films10.1063/1.1314303 ↗
4. Femtosecond laser crystallization of amorphous Ge10.1063/1.3601356 ↗
5. Laser annealing for n+/p junction formation in germanium10.1016/j.mssp.2006.08.013 ↗
6. Explosive crystallization in thin amorphous layers on heat conducting substrates10.1063/1.4922787 ↗
7. Chojnacka · 2002
8. Explosive crystallization in the presence of melting10.1103/PhysRevB.73.184125 ↗
9. Kinetics of liquid-mediated crystallization of amorphous Ge from multi-frame dynamic transmission electron microscopy10.1063/1.4938751 ↗
10. Explosive crystallization in silicon10.1063/1.336910 ↗
11. Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion-implantation10.1063/1.334406 ↗
12. Phase field model of the nanoscale evolution during the explosive crystallization phenomenon10.1063/1.5008362 ↗
13. Complex crystallization dynamics in amorphous germanium observed with dynamic transmission electron microscopy10.1103/PhysRevB.87.064105 ↗
14. Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films10.1063/1.4953153 ↗
15. In situ dynamic TEM characterization of unsteady crystallization during laser processing of amorphous germanium10.1016/j.actamat.2017.10.003 ↗
16. Nanocrystallization of amorphous germanium films observed with nanosecond temporal resolution10.1063/1.3518069 ↗
17. Approaches for ultrafast imaging of transient materials processes in the transmission electron microscope10.1016/j.micron.2012.04.010 ↗
18. Time resolved electron microscopy for in situ experiments10.1063/1.4900509 ↗
19. Crystallization in amorphous germanium10.1063/1.325855 ↗
20. Crystallization processes in a-Ge thin films10.1016/0022-3093(72)90114-7 ↗
21. Bulk nucleation and amorphous phase formation in highly undercooled molten silicon10.1063/1.94912 ↗
22. Phase-field models in materials science10.1088/0965-0393/17/7/073001 ↗
23. An introduction to phase-field modeling of microstructure evolution
24. Phase field theory of crystal nucleation and polyerystalline growth: a review10.1557/jmr.2006.0011 ↗
25. Advances of and by phase-field modelling in condensed-matter physics (vol 57, pg 1, 2008)10.1080/00018730701822522 ↗
26. Phase-field models for microstructure evolution10.1146/annurev.matsci.32.112001.132041 ↗
27. Phase-field simulation of solidification10.1146/annurev.matsci.32.101901.155803 ↗
28. Free energy of a nonuniform system .1. Interfacial free energy10.1063/1.1744102 ↗
29. Microscopic theory for antiphase boundary motion and its application to antiphase domain coarsening10.1016/0001-6160(79)90196-2 ↗
30. Mesoscale computational study of the nanocrystallization of amorphous Ge via a self-consistent atomistic phase-field model10.1016/j.actamat.2014.06.009 ↗
31. Exploring the free energy surface using ab initio molecular dynamics10.1063/1.4945653 ↗
32. Order-parameter-aided temperature-accelerated sampling for the exploration of crystal polymorphism and solid-liquid phase transitions10.1063/1.4878665 ↗
33. Microscopic mechanisms of equilibrium melting of a solid10.1126/science.1253810 ↗
34. Observations on the “explosive” crystallization of non-crystalline Ge10.1016/0038-1098(75)90175-1 ↗
35. Physicohemical properties of molten elemental semiconductors: silicon and germanium
36. Incropera · 1990
37. Dynamics of laser annealing of amorphous Ge and GaAs films by the transient grating method10.1109/JQE.1986.1073112 ↗
38. Gale · 2003
39. Specific heat and heat of crystallization of amorphous germanium10.1063/1.1657175 ↗
40. Specific heat and related thermodynamic properties of an undercooled germanium melt10.1063/1.1775888 ↗
41. Electron-beam induced explosive crystallization of unsupported amorphous-germanium thin-films10.1063/1.333085 ↗
42. Applications of semi-implicit Fourier-spectral method to phase field equations10.1016/S0010-4655(97)00115-X ↗