Radius-dependent homogeneous strain in uncoalesced GaN nanowires
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Abstract
This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in Acta Materialia, copyright © [Copyright © 2020 Elsevier B.V.]. To access the final edited and published work see https://doi.org/10.1016/j.actamat.2020.04.045
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Ga2O3 and related materials
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