High-density arrays of low-defect-concentration zinc oxide nanowire grown on transparent conducting oxide glass substrate by chemical vapor deposition

High-density ZnO nanowire arrays with low defect concentrations were directly grown on transparent conducting oxide glass substrates under catalyst-free and low temperature conditions by chemical vapor deposition (CVD). A possible growth mechanism of the nanowires is studied. The experiments indicate that correct levels of supersaturation and evaporation temperature are beneficial to the growth of ZnO nanowires. Photoluminescence exhibits a weak ultraviolet emission at 380 nm and a strong green emission at 495 nm. While using a double-tube growth system, the visible light emission diminishes and the 380 nm emission is the only emission, suggesting that ZnO nanowires with few defects can be prepared using the present CVD technique at low temperature.