Atomistic investigation of diffusion processes at Al(Si)/Si(111) interphase boundaries obtained by simulated vapor deposition
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OpenAlex topics: Semiconductor materials and interfaces · Microstructure and mechanical properties · Silicon and Solar Cell Technologies
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References (45)
Show source-provided references
1. The effect of crystallographic parameters of interphase boundaries on their surface tension and parameters of the boundary diffusion10.1016/0001-6160(84)90081-6 ↗
2. Mechanisms of solid-state dewetting of thin Au films in different annealing atmospheres10.1016/j.actamat.2014.09.049 ↗
3. Anomalous diffusion along metal/ceramic interfaces10.1038/s41467-018-07724-7 ↗
4. Metal hetero-diffusion along the metal–ceramic interfaces: A case study of Au diffusion along the Ni-sapphire interface10.1016/j.actamat.2019.12.051 ↗
5. Creep behavior of interfaces in fiber reinforced metal–matrix composites10.1016/S1359-6454(98)00327-9 ↗
6. Role of interfacial and matrix creep during thermal cycling of continuous fiber reinforced metal–matrix composites10.1016/S1359-6454(99)00402-4 ↗
7. Diffusionally accommodated interfacial sliding in metal-silicon systems10.1016/S1359-6454(03)00088-0 ↗
8. Measurement of creep kinetics at Al-Si interfaces10.1016/S1359-6462(02)00262-2 ↗
9. Processing and characterization of diffusion-bonded Al-Si interfaces10.1016/S0924-0136(03)00877-X ↗
10. Atomistic modeling of metal-nonmetal interphase boundary diffusion10.1016/j.actamat.2023.119172 ↗
11. Atomic-level mechanisms of short-circuit diffusion in materials10.1515/ijmr-2023-0202 ↗
12. Fast parallel algorithms for short-range molecular-dynamics10.1006/jcph.1995.1039 ↗
13. An angular embedded atom method interatomic potential for the aluminum–silicon system10.1088/0965-0393/22/5/055010 ↗
14. Molecular dynamics studies of defect formation during heteroepitaxial growth of InGaN alloys on (0001) GaN surfaces10.1063/1.4983066 ↗
15. Stillinger-weber potential for the ii-vi elements Zn-Cd-Hg-S-Se-Te
16. Dislocation formation in the heteroepitaxial growth of PbSe/PbTe systems10.1016/j.actamat.2023.119308 ↗
17. Robust structural identification via polyhedral template matching10.1088/0965-0393/24/5/055007 ↗
18. Point-defect avalanches mediate grain boundary diffusion10.1038/s43246-022-00314-7 ↗
19. Parallel replica method for dynamics of infrequent events10.1103/PhysRevB.57.R13985 ↗
20. The parallel replica dynamics method – Coming of age10.1016/j.commatsci.2014.12.011 ↗
21. Perez · 2009 · 79
22. A climbing image nudged elastic band method for finding saddle points and minimum energy paths10.1063/1.1329672 ↗
23. Improved tangent estimate in the nudged elastic band method for finding minimum energy paths and saddle points10.1063/1.1323224 ↗
24. Tunneling images of atomic steps on the Si (111) 7×7 surface10.1103/PhysRevLett.55.2028 ↗
25. 7×7 reconstruction on Si (111) resolved in real space10.1103/PhysRevLett.50.120 ↗
26. Ab initio theory of the Si (111)-(7×7) surface reconstruction: A challenge for massively parallel computation10.1103/PhysRevLett.68.1355 ↗
27. Electronic properties of Si (111)-7×7 and related reconstructions: Density functional theory calculations10.1103/PhysRevB.85.195315 ↗
28. Density functional theory study of the geometry, energetics, and reconstruction process of Si (111) surfaces10.1021/la052029s ↗
29. Structure analysis of Si (111)-7×7 reconstructed surface by transmission electron diffraction10.1016/0039-6028(85)90753-8 ↗
30. Microstructural evolution and solid state dewetting of epitaxial Al thin films on sapphire (α-Al2O3)10.1016/j.actamat.2017.05.026 ↗
31. On pinning-depinning and microkink-flow in solid state dewetting: Insights by in-situ ESEM on Al thin films10.1016/j.actamat.2018.11.028 ↗
32. Growth and microstructural stability of epitaxial Al films on (0001) α-Al2O3 substrates10.1016/S1359-6454(02)00347-6 ↗
33. Growth and structure of copper thin films deposited on (0001) sapphire by molecular beam epitaxy10.1080/01418639508241899 ↗
34. Dehm · 2005 · 249
35. Microstructure evolution and thermal stability of equiatomic CoCrFeNi films on (0001) α-Al2O310.1016/j.actamat.2020.09.064 ↗
36. Metamorphic growth of relaxed single crystalline aluminum on silicon (111)10.1116/1.4971200 ↗
37. Perfect strain relaxation in metamorphic epitaxial aluminum on silicon through primary and secondary interface misfit dislocation arrays10.1021/acsnano.8b02065 ↗
38. Contribution of triple junctions to the diffusion anomaly in nanocrystalline materials10.1016/j.scriptamat.2007.03.057 ↗
39. Triple junction diffusion and plastic flow in fine-grained materials10.1016/S1359-6462(02)00096-9 ↗
40. Direct experimental observation of accelerated Zn diffusion along triple junctions in Al10.1016/S0921-5093(00)01367-8 ↗
41. Triple-junction contribution to diffusion in nanocrystalline si10.1063/1.3435476 ↗
42. Triple junction transport and the impact of grain boundary width in nanocrystalline Cu10.1021/nl300751q ↗
43. Molecular dynamics modeling of self-diffusion along triple junctions10.1103/PhysRevB.79.174110 ↗
44. Titanium tracer diffusion in grain boundaries of α-Ti, α2-Ti3Al, and γ-TiAl and in α2/γ interphase boundaries10.1016/S0966-9795(01)00022-X ↗
45. Atomistic modeling of interface strengthening in Al-Si eutectic alloys10.1016/j.actamat.2021.117586 ↗