Unusual nanoscale amorphization of metallic chromium interfacing with SiC under high energy irradiation

Layered metal/silicon carbide (SiC) materials systems are becoming increasingly relevant to solve materials challenges in advanced fission and fusion nuclear energy systems, necessitating a deeper understanding of how interfaces between dissimilar materials behave under high energy irradiation. In this work, we use a Cr-SiC bilayer system as a model to study the behavior of such interfaces under high energy ion irradiation (80 MeV Xe ²⁶⁺ ions) at elevated temperatures (∼350 °C). Through high resolution characterization of the interface, we observed the formation of a nanoscale Cr-rich amorphous layer adjacent to crystalline SiC. We explain this phenomenon through a multi-scale computational approach incorporating ballistic mixing simulations, density functional theory calculations, and CALPHAD-based non-equilibrium modeling that shows the localized amorphization of Cr to be driven by the synergistic action of irradiation-induced point defects within Cr and transport of Si and C atoms across the interface. In particular, the accumulation of radiation damage results in the thermodynamic destabilization of the point-defect containing, metastable Cr-Si-C solid solution with respect to an amorphous phase of identical composition. This study advances the understanding of how metal/SiC interfaces behave under irradiation and establishes a modeling framework that can be applied to interfacial systems to understand irradiation-induced amorphization.