Outgassing of implanted He via short circuit transport along phase and grain boundaries in vapor co-deposited Cu-W nanocomposites
Source abstract
Abstract
We investigate the response of physical vapor co-deposited copper (Cu)-tungsten (W) nanocomposites to helium (He) implantation. Nuclear reaction analysis (NRA) reveals that a substantial fraction of He implanted into these materials escapes during implantation. Analysis of nanocomposite microstructure shows that the He loss is likely due to its transport out of the material by diffusion along phase and grain boundaries. Our findings suggest that solid-state interfaces such as phase and grain boundaries are short circuit diffusion pathways for transport of He.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Fusion materials and technologies · Advanced materials and composites · Metal and Thin Film Mechanics
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