journal article·2019-03

Correlation between thermal-vibration-induced large displacement of Cu atoms and phase transition in Cu4SnS4: First-principles investigation

Naoyuki Nagasako, Akitoshi Suzumura, Ryoji Asahi

Acta Materialia· Volume 166
Publisher page

Abstract

Abstract First-principles (FP) calculations and first-principles molecular dynamics (FPMD) simulations for Cu4SnS4 were performed to clarify the origin of the structural phase transition at 232 K between the high-temperature phase (HP) and low-temperature phase (LP), which leads to an experimentally measured drastic change in the transport properties of Cu4SnS4. The results of the FP and PFMD calculations indicated that, rather than being caused by the so-called freezing of soft modes, the key driving force behind the phase transition in Cu4SnS4 is a large-scale displacement of the Cu atoms located at particular sites due to thermal vibration. In fact, tetrahedrally coordinated CuS4 is stabilized by the effect of the thermal vibration of Cu atoms in the HP whereas CuS3, which is in a trigonal planar environment, is stabilized in the LP.
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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Advanced Thermoelectric Materials and Devices · nanoparticles nucleation surface interactions

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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