In situ atomic-scale observation of transformation from disordered to ordered layered structures in Ge-Sb-Te phase change memory thin films
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OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Nonlinear Optical Materials Studies
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References (64)
Show source-provided references
1. Phase-change materials for rewriteable data storage10.1038/nmat2009 ↗
2. Phase change materials and phase change memory10.1557/mrs.2014.139 ↗
3. Phase-change materials for non-volatile photonic applications10.1038/nphoton.2017.126 ↗
4. Phase change thin films for non-volatile memory applications10.1039/C9NA00366E ↗
5. GeTe)x–(Sb2Te3)1–x phase-change thin films as potential thermoelectric materials10.1002/pssa.201228397 ↗
6. Prediction of topological insulating behavior in crystalline Ge-Sb-Te10.1103/PhysRevB.82.201312 ↗
7. Integrated all-photonic non-volatile multi-level memory10.1038/nphoton.2015.182 ↗
8. In-memory computing on a photonic platform10.1126/sciadv.aau5759 ↗
9. Chalcogenide phase-change devices for neuromorphic photonic computing10.1063/5.0042549 ↗
10. Epitaxial layered Sb2Te3 thin films for memory and neuromorphic applications10.1088/2053-1583/ac1e71 ↗
11. Structural transitions in Ge2Sb2Te5 phase change memory thin films induced by nanosecond uv optical pulses10.3390/ma13092082 ↗
12. Amorphization dynamics of Ge2Sb2Te5 films upon nano- and femtosecond laser pulse irradiation10.1063/1.2836788 ↗
13. Nanoscale bipolar electrical switching of Ge2Sb2Te5 phase-change material thin films10.1002/aelm.201700283 ↗
14. Nanosecond switching in GeTe phase change memory cells10.1063/1.3191670 ↗
15. Thin films of Ge–Sb–Te-based phase change materials: microstructure and in situ transformation10.1021/cm200835a ↗
16. Thermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces10.1063/1.5000338 ↗
17. Interfacial phase-change memory10.1038/nnano.2011.96 ↗
18. Interface formation of two- and three-dimensionally bonded materials in the case of GeTe–Sb2Te3 superlattices10.1039/C5NR04530D ↗
19. The design and application on interfacial phase-change memory10.1002/pssr.201800539 ↗
20. High resolution imaging of chalcogenide superlattices for data storage applications: progress and prospects
21. Temperature dependent evolution of local structure in chalcogenide-based superlattices10.1016/j.apsusc.2020.147959 ↗
22. Crystallization properties of ultrathin phase change films10.1063/1.2938076 ↗
23. Crystallization behavior of sputter-deposited amorphous Ge2Sb2Te5 thin films10.1063/1.370803 ↗
24. Structures of stable and metastable Ge2Sb2Te5, an intermetallic compound in GeTe-Sb2Te3 pseudobinary systems10.1107/S0108768104022906 ↗
25. Structural investigation of GeSb2Te4: a high-speed phase-change material10.1103/PhysRevB.69.104111 ↗
26. Direct imaging of crystal structure and defects in metastable Ge2Sb2Te5 by quantitative aberration-corrected scanning transmission electron microscopy10.1063/1.4869471 ↗
27. Element-resolved atomic structure imaging of rocksalt Ge2Sb2Te5 phase-change material10.1063/1.4949011 ↗
28. Real-space imaging of atomic arrangement and vacancy layers ordering in laser crystallised Ge2Sb2Te5 phase change thin films10.1016/j.actamat.2015.12.010 ↗
29. Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te510.1038/s42004-019-0114-7 ↗
30. situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys
31. Role of vacancies in metal–insulator transitions of crystalline phase-change materials10.1038/nmat3456 ↗
32. Impact of disorder on optical reflectivity contrast of epitaxial Ge2Sb2Te5 thin films10.1039/C8CE00534F ↗
33. Novel superstructure of the rocksalt type and element distribution in germanium tin antimony tellurides10.1016/j.jssc.2014.07.014 ↗
34. Temperature dependent resonant X-ray diffraction of single-crystalline Ge2Sb2Te510.1039/c3ce26956f ↗
35. Structural investigation of Ge3Sb2Te6, an intermetallic compound in the GeTe–Sb2Te3 homologous series10.1063/1.2728030 ↗
36. Understanding the structure and properties of sesqui-chalcogenides (i.e., V2VI3 or Pn2Ch3 (Pn = Pnictogen, Ch = Chalcogen) compounds) from a bonding perspective10.1002/adma.201904316 ↗
37. Metavalent bonding in layered phase-change memory materials
38. Epitaxial formation of cubic and trigonal Ge-Sb-Te thin films with heterogeneous vacancy structures10.1016/j.matdes.2016.11.003 ↗
39. Disorder-induced localization in crystalline phase-change materials10.1038/nmat2934 ↗
40. Metal–Insulator transition driven by vacancy ordering in GeSbTe phase change materials10.1038/srep23843 ↗
41. Boosting the thermoelectric performance of pseudo-layered Sb2Te3(GeTe)n via vacancy engineering10.1002/advs.201801514 ↗
42. High thermoelectric performance achieved in GeTe–Bi2Te3 pseudo-binary via van der Waals gap-induced hierarchical ferroelectric domain structure
43. Real structure and thermoelectric properties of GeTe-rich germanium antimony tellurides10.1021/cm201717z ↗
44. Surface energy driven cubic-to-hexagonal grain growth of Ge2Sb2Te5 thin film10.1038/s41598-017-06426-2 ↗
45. The origin of hexagonal phase and its evolution process in Ge2Sb2Te5 alloy10.1063/5.0079370 ↗
46. Diffusion-assisted displacive transformation in Yttrium-doped Sb2Te3 phase change materials10.1016/j.actamat.2023.118809 ↗
47. Strain-induced van der Waals gaps in GeTe revealed by in situ nanobeam diffraction10.1126/sciadv.add7690 ↗
48. Image analysis and simulation software in transmission electron microscopy10.1017/S1431927603012224 ↗
49. In situ transmission electron microscopy study of the crystallization of Ge2Sb2Te510.1063/1.1636259 ↗
50. Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memory10.1063/1.1314323 ↗
51. Local atomic arrangements and lattice distortions in layered Ge-Sb-Te crystal structures10.1038/srep26724 ↗
52. Atomic-scale observation of grain boundary dominated unsynchronized phase transition in polycrystalline Cu2Se10.1002/adma.202205715 ↗
53. Size effect on the Fe nanocrystalline phase transformation10.1016/S1359-6454(02)00284-7 ↗
54. In situ observations of the reversible vacancy ordering process in van der Waals-bonded Ge-Sb-Te thin films and GeTe-Sb2Te3 superlattices10.1039/C9NR02112D ↗
55. Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements10.1063/1.373041 ↗
56. Structural transition and enhanced phase transition properties of Se doped Ge2Sb2Te5 alloys10.1038/srep08050 ↗
57. The vapor pressure of germanium telluride110.1021/j100814a519 ↗
58. Study of the vaporization behaviour of Sb2S3 and Sb2Te3 from their vapour pressure measurements10.1016/0925-8388(92)90251-4 ↗
59. Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films10.1016/j.apsusc.2007.07.098 ↗
60. Atomic structure and dynamic reconfiguration of layered defects in van der Waals layered Ge-Sb-Te based materials10.1016/j.actamat.2017.09.012 ↗
61. Dynamic reconfiguration of van der Waals gaps within GeTe–Sb2Te3 based superlattices10.1039/C7NR01684K ↗
62. Genesis and effects of swapping bilayers in hexagonal GeSb2Te410.1021/acs.chemmater.8b01900 ↗
63. In situ study of vacancy disordering in crystalline phase-change materials under electron beam irradiation10.1016/j.actamat.2020.01.043 ↗
64. Influence of stress and strain on the kinetic stability and phase transitions of cubic and pseudocubic Ge-Sb-Te materials10.1103/PhysRevB.81.184102 ↗