Micro structures in the grain evolution during solidification of silicon: Phase field calculations
Source abstract
Abstract
Abstract Two dimensional phase field simulations have been performed to study the influence of the growth kinetics and the surface energy on the growth behaviour of grains during solidification of Si. In particular, we studied the groove between two grains as recently observed by in situ observation [1]. Furthermore, we performed computations for different Σ boundaries and discuss the interplay between equilibrium of interfacial energies and growth kinetics.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Solidification and crystal growth phenomena · Aluminum Alloy Microstructure Properties · Microstructure and mechanical properties
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References (32)
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1. Investigation of grain boundary grooves at the solid–liquid interface during directional solidification of multi-crystalline silicon: in situ characterization by X-ray imaging10.1016/j.jcrysgro.2013.05.023 ↗
2. Grain boundary interactions in multicrystalline silicon grown from small randomly oriented seeds10.7567/APEX.8.035502 ↗
3. Evolution of grain structures during directional solidification of silicon wafers10.1016/j.jcrysgro.2015.12.050 ↗
4. Real time observation of the directional solidification of multicrystalline silicon: X-ray imaging characterization10.1016/j.egypro.2012.07.033 ↗
5. Grain growth of silicon10.1016/j.actamat.2012.08.048 ↗
6. Solidification of multicrystalline silicon - simulation of micro structures10.1016/j.jcrysgro.2013.01.044 ↗
7. Three-dimensional phase field modeling of silicon thin-film growth during directional solidification: facet formation and grain competition10.1016/j.jcrysgro.2014.02.016 ↗
8. Extending phase field models of solidification to polycrystalline materials10.1016/S1359-6454(03)00388-4 ↗
9. Modeling grain boundaries using a phase-field technique10.1016/S0022-0248(99)00856-8 ↗
10. Study of silicon crystal surface formation based on molecular dynamics simulation results10.1016/j.jcrysgro.2014.01.004 ↗
11. Crystal growth and equilibrium crystal shapes of silicon in the melt10.1002/pip.2290 ↗
12. Kinetic coefficient of steps at the Si(111) crystal-melt interface from molecular dynamics simulations10.1063/1.2754682 ↗
13. Anisotropy of crystal-melt interfacial free energy of silicon by simulation10.1063/1.2937444 ↗
14. Surface free energy model of silicon anisotropic etching10.1149/1.2056201 ↗
15. Reconstructed structures of symmetrical 〈011〉 tilt grain boundaries in silicon10.1002/pssb.2221380202 ↗
16. A molecular dynamics study of tilt grain boundary resistance to slip and heat transfer in nanocrystalline silicon10.1063/1.4905248 ↗
17. Computational studies of grain boundaries in covalent materials, Modelling Simul
18. Response to: some remarks on the undercooling of the Si(111) facet and the “Monte Carlo modeling of silicon crystal growth” by Kirk M. Beatty & Kenneth A. Jackson
19. Some remarks on the undercooling of the Si(111) facet and the “Monte Carlo modeling of silicon crystal growth” by Kirk M. Beatty & Kenneth A. Jackson
20. Monte Carlo modeling of silicon crystal growth10.1016/S0022-0248(99)00836-2 ↗
21. Density and thermal conductivity measurements for silicon melt by electromagnetic levitation under a static magnetic field10.1007/s10765-007-0160-8 ↗
22. Computer modelling of heat transfer in Czochralski silicon crystal growth10.1016/0022-0248(91)90126-P ↗
23. 1984 · vol. 17
24. Watanabe · 2010
25. Crystallization of 640 kg mc-silicon ingots under traveling magnetic field by using a heater-magnet module10.1016/j.jcrysgro.2012.11.049 ↗
26. A multi-relaxation lattice kinetic method for passive scalar diffusion10.1016/j.jcp.2004.12.010 ↗
27. http://www.mcs.anl.gov/petsc/.
28. The use of classical macroscopic concepts in surface-energy problems
29. Grain boundary energy anisotropy: a review10.1007/s10853-011-5677-3 ↗
30. Voronkov · Kristallografiya · 1972 · 17 · 909
31. On the twinning occurrence in bulk semiconductor crystal growth10.1016/j.scriptamat.2010.02.034 ↗
32. Revisiting the twinning mechanism in directional solidification of multi-crystalline silicon sheet10.1016/j.actamat.2017.03.077 ↗