journal article·2014-08

Compound-induced changes in thermal, structural and optical properties of indium–gallium–zinc oxides prepared by sol–gel method

Keh-moh Lin, Po-chun Hsu, Guan-ting Chen, Yutaka Sawada

Publisher page

Abstract

In this study, IZO/IGZO powders and films of different composition ratios were fabricated by sol–gel method. The influences of the composition ratio on the decomposition temperature, crystallization behavior, structural and optical properties of multi-component oxides were thoroughly examined. Thermogravimetric/differential scanning calorimetric results revealed that in contrast to zinc and indium oxides, the high crystallization temperature and low crystallinity of gallium oxide were attributed to the high dehydroxylation temperature of gallium hydroxide, which led to the high decomposition and crystallization temperatures of IGZO compound. The XRD analysis of the IGZO films confirmed that the addition of Ga amount made the films turn into amorphous easily. However, TEM analysis suggested that the IZO film (In:Zn = 1:2) and the IGZO (In:Ga:Zn = 1:1:1) film consisted of short-range-order nanostructure although the selected area diffraction of both samples indicated that they are amorphous. The transmittance measurements agreed well with the XRD results; that is, the band gaps of the IZO/IGZO films obviously depend on the composition ratio and are closely related to the change of the structural properties.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Transition Metal Oxide Nanomaterials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (23)

Show source-provided references
1. Hosono H (2007) Thin Solid Films 515:600010.1016/j.tsf.2006.12.125 ↗
2. Phillips JM, Cava RJ, Thomas GA, Carter SA, Kwo J, Siegrist T, Krajewski JJ, Marshall JH, Peck WF Jr, Rapkine DH (1995) Appl Phys Lett 67:224610.1063/1.115118 ↗
3. Lee S-Y, Park B-O (2005) Thin Solid Films 484:18410.1016/j.tsf.2005.03.007 ↗
4. Chen KJ, Hung FY, Chang SJ, Hu ZS (2009) Appl Surf Sci 255:630810.1016/j.apsusc.2009.02.007 ↗
5. Choi CG, Seo SJ, Bae BS (2008) Electrochem Solid-State Lett 11:H710.1149/1.2800562 ↗
6. Seo SJ, Choi CG, Hwang YH, Bae BS (2009) J Phys D Appl Phys 42:03510610.1088/0022-3727/42/3/035106 ↗
7. Lee JH, Ko KH, Park BO (2003) J Cryst Growth 247:11910.1016/S0022-0248(02)01907-3 ↗
8. Jiménez-González AE, Urueta JAS, Suárez-Parra R (1998) J Cryst Growth 192:43310.1016/S0022-0248(98)00422-9 ↗
9. Bandyopadhyay S, Paul GK, Roy R, Sen SK, Sen S (2002) Mater Chem Phys 74:8310.1016/S0254-0584(01)00402-3 ↗
10. Ong BS, Li C, Li Y, Wu Y, Loutfy R (2007) J Am Chem Soc 129:275010.1021/ja068876e ↗
11. Cheng HC, Chen CF, Tsay CY, Leu JP (2009) J. Alloy Compd. 475:L4610.1016/j.jallcom.2008.08.080 ↗
12. Poznyak SK, Kulak AI (2000) Electrochim Acta 45:159510.1016/S0013-4686(99)00319-9 ↗
13. Ho WH, Yen SK (2006) Thin Solid Films 498:8010.1016/j.tsf.2005.07.072 ↗
14. Li E, Cheng Z, Xu J, Pan Q, Yu W, Chu Y (2009) Cryst Growth Des 9:214610.1021/cg8007238 ↗
15. Pentyala N, Guduru RK, Shnerpunas EM, Mohanty PS (2011) Appl Surf Sci 257:685010.1016/j.apsusc.2011.03.018 ↗
16. Lee I, Kwak J, Haam S, Lee SY (2010) J Cryst Growth 312:210710.1016/j.jcrysgro.2010.03.043 ↗
17. Girija K, Thirumalairajan S, Avadhani GS, Mangalaraj D, Ponpandian N, Viswanathan C (2013) Mater Res Bull 48:229610.1016/j.materresbull.2013.02.047 ↗
18. Kim GH, Shin HS, Ahn BD, Kim KH, Park WJ, Kimz HJ (2009) J Electrochem Soc 156:H710.1149/1.2976027 ↗
19. Inoue K, Tominaga K, Tsuduki T, Mikawa M, Moriga T (2009) Vacuum 83:55210.1016/j.vacuum.2008.04.066 ↗
20. Jeon H, Na S, Moon MR, Jung D, Kim H, Lee HJ (2011) J Electrochem Soc 158:H94910.1149/1.3615534 ↗
21. Wang Y, Liu SW, Sun XW, Zhao JL, Goh GKL, Vu QV, Yu HY (2010) J Sol–Gel Sci Technol 55:32210.1007/s10971-010-2256-z ↗
22. Lin K, Chen G -T, Hsu P -C, Sawada Y submitted to JSST
23. Kasper H (1967) Z. Anorg Allg. Chem. 349:11310.1002/zaac.19673490302 ↗