The study of the CdS film and the carrier transport characteristics of CdS/CuInS2 pn junction
Source abstract
Abstract
Cadmium sulfide (CdS) films were grown by chemical-bath deposition (CBD). Some films were annealed at 300 °C in N2 atmosphere for 30 min. The diffraction peaks related to the (111) crystal plane of wurtzite CdS phase appeared in as prepared CdS films. After annealing, the diffraction peaks related to (220) and (311) crystal planes of wurtzite CdS phase came out. Meanwhile, the roughness, the crystallite sizes and the Cd/S ratio of annealed CdS films increased, which might be due to the volatilization of S element. Furthermore, the absolute values of photocurrent of different CdS films may be related to the interaction between the electron and the intrinsic defects in CdS film and the absorption capacity for incident light. Moreover, the I-V characteristics for all FTO/CdS/CuInS2/Mo hetero-junctions exhibited successful rectifying characteristic, and the corresponding electrical parameters may be attributed to the thickness of CdS films and the intrinsic defects in p-n junction. The figure is the photocurrent-time curves of CdS thin films prepared by different time.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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