Resistive switching behavior in amorphous and crystalline TiO2 thin films by sol–gel process
Source abstract
Abstract
We present recent studies on amorphous and crystalline TiO2 resistive switching nonvolatile memory devices. A chemical sol–gel process is demonstrated for preparing amorphous and crystalline TiO2 thin films with different calcination temperature. Glass/SnO2:F/TiO2/Cu sandwich structures are fabricated and their current–voltage characteristics are examined. We found that the switching voltage goes from 4.8 to 3.5 V and the current compliance also drops from 10 to 1 mA when calcination temperatures increased. Smooth surface of TiO2 thin films are also observed by XRD, AFM and XPS.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Phase-change materials and chalcogenides
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