Effect of doping concentration and annealing temperature on threshold voltages of bipolar resistive switching in Mn-doped BiFeO3 films
Source abstract
Abstract
Nonvolatile bipolar resistive switching has been investigated in Mn-doped BiFeO3 thin films fabricated by sol–gel method. Based on the analyses of X-ray diffractometer and X-ray photoelectron spectroscopy, the threshold voltages for forming and set operations in bipolar resistive switching, which are found to depend on Mn doping concentration and annealing temperature, can be ascribed to the variation of oxygen vacancy concentration and grain size. Therefore, the modulated ionic oxygen vacancy conductivity has been suggested to play a pivotal role in the resistive switching of Mn-doped BiFeO3 thin films. The forming and set voltages of resistive switching depend on doping concentration and annealing temperature.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Piezoelectric Materials · Multiferroics and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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