Direct observation of NiSi lateral growth at the epitaxial θ-Ni2Si/Si(1 0 0) interface
Source abstract
Abstract
Abstract The first stages of NiSi phase formation at the expense of θ-Ni2Si and a Si substrate are investigated by transmission electron microscopy (TEM). These measurements show the presence of a low density of NiSi particles at the θ-Ni2Si/Si(1 0 0) interface and allow their complete shape to be determined. This stage corresponds to the lateral growth of NiSi at the epitaxial θ-Ni2Si/Si(1 0 0) interface. The shape of these particles is in agreement with the predicted models, and the shapes were fitted by an analytical expression derived from the model developed by Klinger et al.
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Research context
OpenAlex topics: Semiconductor materials and interfaces · Semiconductor materials and devices · Silicon and Solar Cell Technologies
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