The influence of titanium doping on the electric properties of amorphous alumina films prepared by sol–gel technology
Source abstract
Abstract
The influence of titanium doping on the electric properties of amorphous alumina (Al2O3) films prepared by sol–gel technology was investigated. EDX mapping analysis indicates that the titanium cations are uniformly distributed in the film as Al2−xTixOy. The XPS analysis reveals that the titanium exists in the form of TiO2. The breakdown strength of the doped film can be much enhanced by the titanium doping. The dielectric strength of undoped Al2O3 films is 3.4 MV/cm, while the breakdown strength of the 10 % Ti-doped Al2O3 films is 5.3 MV/cm. Compared with the undoped Al2O3 films, the soft breakdown of Ti-doped Al2O3 films is gradually suppressed with the increasing of the titanium doping amount. Especially, there is hardly any soft breakdown observed for 10 % Ti-doped Al2O3 films.
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Research context
OpenAlex topics: Semiconductor materials and devices · Ferroelectric and Piezoelectric Materials · Microwave Dielectric Ceramics Synthesis
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References (21)
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