Synthesis of two-dimensional gallium nitride via spin coating method: influences of nitridation temperatures
Source abstract
Abstract
This paper reports the synthesis and characterization of gallium nitride (GaN) thin films deposited on p-type silicon (100) substrates by using low cost spin coating method under various nitridation temperatures. This work demonstrated that spin coating with the new prepared precursor solution can be used as a versatile method for the successfully growth of GaN thin films. Furthermore, the influence of varying nitridation temperatures on the structural, morphological, and optical properties of synthesized GaN thin films were studied in this work. The GaN thin films were characterized by X-ray diffraction, field-emission scanning electron microscopy, atomic force microscopy, photoluminescence and Raman spectroscopy. All the characteristics of the GaN thin films were effectively improved with the increasing of the nitridation temperatures from 750 to 950 °C and degraded at temperature of 1,050 °C. The measured results show that nitridation temperature plays an important role in improving the crystalline quality of the GaN thin films and the most efficient nitridation temperature was at 950 °C.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties
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