SnO2 thin films doped indium prepared by the sol–gel method: structure, electrical and photoluminescence properties

This paper reports on the preparation, characterization, electrical and optical properties of tin oxide (SnO2) thin films doped indium prepared by the sol–gel method and deposited on glass substrates with dip coating technique. X-ray diffraction patterns showed an increase in the crystallinity of the films with increase in annealing temperatures. Atomic force microscopy analyses revealed an increase of grain growth with raise in annealing temperature. The film surface revealed positive skewness and kurtosis values less than 3 which make them favorable for OLEDs applications. The lowest resistivity (about 10−7) was obtained for the ITO films annealed at 500 °C. These films acquire n-type conductivity due to the non-stoichiometric in the films like (interstitial tin atoms) and also due to low indium doping concentration. The optical properties of the films have been studied from transmission spectra. An average transmittance of >80 % in ultraviolet–visible region was observed for all the films. Optical band gap energy (E gap) of ITO films was found to vary in the range of 3.69–3.81 eV with the increase in annealing temperature. This slight shift of E gap to higher photon energies could be related to the crystalline nature of the films associated with the decrease in the defect concentration caused by annealing. Photoluminescence spectra of the films exhibited an increase in the emission intensity with increase in annealing temperature. The high temperature annealing would be expected to decrease the density of defects, improve the crystal orientation and reduce the traps for non-radiative transition and also increase the oxidation processes.