Annealing induced void formation in epitaxial Al thin films on sapphire (α-Al2O3)
Source abstract
Abstract
In this work faceted voids are studied which were induced by solid state dewetting at 600 C of tetracrystalline Al thin films covered with a native oxide layer. Hexagonally shaped voids are observed in a few locations where Al is uniformly redistributed to the surrounding thin film. Although faceted, the majority of the voids exhibit irregular shapes caused by pinning of distinct sides of the retracting Al thin film. The two different Aljvoid shapes (hexagonal or irregular) are investigated by site-specific crosssectional transmission electron microscopy (TEM) analysis. The TEM studies reveal Aljvoid regions with and without rims and ridges. The presence of rims and ridges is explained by a discontinuous void formation process caused by pinning of the retracting Al film.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Fluid Dynamics and Thin Films · Solidification and crystal growth phenomena · Copper Interconnects and Reliability
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (90)
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