Influence of the spin acceleration time on the properties of ZnO:Ga thin films deposited by sol–gel method
Source abstract
Abstract
A detailed study of the structural, morphological, optical, and electrical properties of the spin-coated Ga-doped ZnO (GZO) films in which these properties are altered by varying the spin acceleration time (tacc) was undertaken. The results showed that, by varying tacc, there is no significant variation in crystal size, and band gap energy of the films, while some physical parameters such as strain $$\left( \varepsilon \right)$$ , surface roughness (RMS), and porosity (P) are remarkably varied. By increasing tacc from 0 to 8 s, $$\varepsilon$$ , RMS, and P, were increased by 230, 83, and 49%, respectively. Electrical data were presented to demonstrate unambiguously that the variation in the films resistivity (ρ) is closely connected to the change in these parameters. To explain these findings, a simple formula was proposed in the investigated range of tacc, which demonstrated that ρ is more related to $$\varepsilon$$ and P, and then to RMS.
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Research context
OpenAlex topics: ZnO doping and properties · Copper-based nanomaterials and applications · Quantum Dots Synthesis And Properties
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