Dependence of intermetallic compound formation on the sublayer stacking sequence in Ag–Sn bilayer thin films
Source abstract
Abstract
Abstract Intermetallic compound (IMC) formation in thermally-evaporated Ag–Sn bilayer thin films has been investigated employing especially X-ray diffraction (XRD) and (S)TEM methods. The specific IMCs that are present in the as-deposited state depend sensitively on the stacking sequence of the sublayers. In case of Sn on top of Ag, predominantly Ag 3 Sn is formed, whereas Ag 4 Sn is predominantly present in the as-deposited state for Ag on top of Sn. In the latter case this is accompanied by an extremely fast uptake of a large amount of Sn by the Ag sublayer, leaving behind macroscopic voids in the Sn sublayer. The results are discussed on the basis of the thermodynamics and kinetics of (IMC) product-layer growth in thin films. It is shown that both thermodynamic and kinetic arguments explain the contrasting phenomena observed.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Electronic Packaging and Soldering Technologies · Metallurgical and Alloy Processes · Surface and Thin Film Phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (54)
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