Solution-processable zinc oxide based thin films with different aluminum doping concentrations
Source abstract
Abstract
Al doped zinc oxide (AZO) thin films are attempted to be formed on glass substrates via solution processing with 0, 0.5, 1, 2, 3, and 4 at% Al doping concentrations. Analysis of X-ray diffraction patterns and scanning electron microscopy micrographs indicate that the AZO thin films belong to the wurtzite hexagonal structure with (100), (002), (101), (102), (110), (103), (112) and (201) orientations, and show that the grain size of AZO thin films decreases with higher Al doping concentrations. Optical and electrical properties of the AZO thin films are characterized from using a UV/vis spectrometer and a four-probe measurement system, respectively. The AZO thin films obtained have a minimum sheet resistance of 30.41 Ω/sq for the dopant concentration of 1 at%, and a bandgap energy varying from 3.26 eV to 3.16 eV as the Al doping concentration increases from 0 to 4 at%. The maximum figure of merit value of 7.48 × 10−3 (Ω/sq)−1 corresponds to the deposition of the AZO thin film with 2 at% Al doping.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (31)
Show source-provided references
1. The effect of front ZnO:Al surface texture and optical transparency on efficient light trapping in silicon thin-film solar cells10.1063/1.2715554 ↗
2. Highly conductive transparent organic electrodes with multilayer structures for rigid and flexible optoelectronics10.1038/srep10569 ↗
3. Metal oxides for optoelectronic applications10.1038/nmat4599 ↗
4. High mobility transparent conductive Al-doped ZnO thin films by atomic layer deposition10.1016/j.jallcom.2017.08.207 ↗
5. Low-temperature synthesis of indium tin oxide nanowires as the transparent electrodes for organic light emitting devices
6. On the transparent conducting oxide Al doped ZnO: first principles and Boltzmann equations study10.1016/j.jallcom.2014.03.177 ↗
7. Past achievements and future challenges in the development of optically transparent electrodes10.1038/nphoton.2012.282 ↗
8. Tailoring electrical and optical properties of Al-doped ZnO thin films grown at room temperature by reactive magnetron co-sputtering: from band gap to near infrared10.1016/j.optmat.2018.06.024 ↗
9. Porosity-tuned thermal conductivity in thermoelectric Al-doped ZnO thin films grown by mist-chemical vapor deposition10.1016/j.tsf.2019.06.010 ↗
10. Optical modeling of plasma-deposited ZnO films: electron scattering at different length scales10.1116/1.4905086 ↗
11. Influence of solvents on deposition mechanism of Al-doped ZnO films synthesized by cold wall aerosol-assisted chemical vapor deposition10.1016/j.tsf.2013.07.002 ↗
12. Formation of Al-doped ZnO thin films on glass by sol–gel process and characterization10.1007/s13204-015-0425-7 ↗
13. Structural, optical and photocatalysis properties of sol–gel deposited Al-doped ZnO thin films10.1016/j.surfin.2019.05.007 ↗
14. Muscovite mica as a flexible substrate for transparent conductive AZO thin films deposited by spray pyrolysis10.1016/j.mssp.2018.03.009 ↗
15. Enhanced doping efficiency of Al-doped ZnO by atomic layer deposition using dimethylaluminum isopropoxide as an alternative aluminum precursor10.1021/cm402974j ↗
16. Electrical conductivity and photoresistance of atomic layer deposited Al-doped ZnO films10.1116/1.4772665 ↗
17. Effects of Al doping on the properties of ZnO thin films deposited by atomic layer deposition10.1186/s11671-016-1625-0 ↗
18. Highly conductive and transparent AZO films fabricated by PLD as source/drain electrodes for TFTs10.3390/ma11122480 ↗
19. Influence of working pressure on the structural, optical and electrical properties of sputter deposited AZO thin films10.1016/j.mssp.2014.12.076 ↗
20. Controlled texture of reactively rf-sputtered ZnO thin films10.1063/1.325158 ↗
21. Effect of 50 MeV Li3+ irradiation on structural and electrical properties of Mn-doped ZnO10.1088/0953-8984/23/20/205801 ↗
22. Effects of Li and Mg doping on microstructure and properties of sol-gel ZnO thin films10.1016/S0955-2219(01)00182-0 ↗
23. Ferroelectric and dielectric properties of Li-doped ZnO thin films prepared by pulsed laser deposition10.1007/s00339-002-1497-2 ↗
24. Studies on the structural, electrical and optical properties of Al-doped ZnO thin films prepared by chemical spray deposition10.1016/j.ceramint.2005.03.029 ↗
25. Aluminum-doped zinc oxide thin films prepared by sol-gel and RF magnetron sputtering10.12693/APhysPolA.120.149 ↗
26. Evaluation of the structural, optical and electrical properties of AZO thin films prepared by chemical bath deposition for optoelectronics10.1016/j.solidstatesciences.2018.02.003 ↗
27. New figure of merit for transparent conductors10.1063/1.323240 ↗
28. A figure of merit to evaluate transparent conductor oxides for solar cells using photonic flux density10.1016/j.tsf.2015.12.038 ↗
29. High photo-responsivity ZnO UV detectors fabricated by RF reactive sputtering10.1016/j.materresbull.2012.10.030 ↗
30. Effects of carrier concentration on the dielectric function of ZnO: Ga and In2O3: Sn studied by spectroscopic ellipsometry: analysis of free-carrier and band-edge absorption10.1103/PhysRevB.71.075109 ↗
31. Microstructure and electro-optical properties of sol–gel derived Cd-doped ZnO films, Superlattice10.1016/j.spmi.2010.02.006 ↗