journal article·2011-07

Fabrication and thermoelectric properties of c-axis-aligned Bi0.5Sb1.5Te3 with a high magnetic field

Dong Hwan Kim, Cham Kim, Koo-Chul Je, Gook Hyun Ha, Hoyoung Kim

Acta Materialia· Volume 59· Issue 12
Publisher page

Abstract

Abstract We simultaneously investigated the effects of nanostructure and crystal alignment on the thermoelectric performance of polycrystalline Bi0.5Sb1.5Te3. An appropriate experimental procedure was devised for a sequential process of slip-casting under a 6 T magnetic field for c-axis alignment and the use of a spark plasma sinter machine for sintering. Flake-shaped powders with particles less than 36 μm in diameter stacked up with c-axis alignment under a 6 T rotating magnetic field, while the same powders with particles less than 5 μm in diameter showed a random orientation with no magnetic field. The c-axis-aligned material under the magnetic field showed an increase in hole mobility along the direction perpendicular to the c-axis that resulted in a 15% decrease in the electric resistivity, while the Seebeck coefficient and thermal conductivity remained unchanged; thus the figure of merit was improved by 15%. Theoretical evaluation of the electrical resistivity according to the c-axis alignment showed good agreement with the experimental results.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal Radiation and Cooling Technologies · Thermal properties of materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (24)

Show source-provided references
1. Ioffe · 1957
2. Goldsmid · Br J Appl Phys · 1954 · 5 · 45810.1088/0508-3443/5/12/513 ↗
3. Dresselhaus · Adv Mater · 2007 · 19 · 104310.1002/adma.200600527 ↗
4. Wiese · J Phys Chem Solids · 1960 · 15 · 1310.1016/0022-3697(60)90094-9 ↗
5. Delves · Proc Phys Soc · 1961 · 78 · 83810.1088/0370-1328/78/5/329 ↗
6. Stordeur · Phys Status Solidi B · 1981 · 104 · 51310.1002/pssb.2221040215 ↗
7. Kim · Acta Mater · 2011 · 59 · 40510.1016/j.actamat.2010.09.054 ↗
8. Oh · Scripta Mater · 2000 · 42 · 84910.1016/S1359-6462(00)00302-X ↗
9. Hong · Mater Res Bull · 2003 · 38 · 59910.1016/S0025-5408(03)00022-9 ↗
10. Pierrat · J Mater Sci · 1997 · 32 · 365310.1023/A:1018686514939 ↗
11. Miura · Mater Sci Eng A · 2000 · 277 · 24410.1016/S0921-5093(99)00539-0 ↗
12. Seo · Mater Sci Eng B · 1997 · 49 · 24710.1016/S0921-5107(97)00123-2 ↗
13. Kingery · 1976
14. Kaga · J Mater Res · 2007 · 22 · 291710.1557/JMR.2007.0360 ↗
15. Kaga · Jpn J Appl Phys · 2006 · 45 · L121210.1143/JJAP.45.L1212 ↗
16. Tang · Mater Res Bull · 2004 · 34 · 215510.1016/j.materresbull.2004.08.012 ↗
17. Asai · ISIJ Int · 2007 · 47 · 51910.2355/isijinternational.47.519 ↗
18. Stepanov · Semiconductors · 2008 · 42 · 40110.1134/S1063782608040064 ↗
19. Lan · Adv Funct Mater · 2010 · 20 · 35710.1002/adfm.200901512 ↗
20. Scheele · Adv Funct Mater · 2009 · 19 · 347610.1002/adfm.200901261 ↗
21. Binnewies · 2002 · vol. 168
22. Herring · J Appl Phys · 1960 · 31 · 193910.1063/1.1735477 ↗
23. Ryden · J Phys C: Solid State Phys · 1971 · 4 · 119310.1088/0022-3719/4/10/027 ↗
24. Ryden · J Phys C: Solid State Phys · 1974 · 7 · 265510.1088/0022-3719/7/15/014 ↗