Growth of CaSi2 single-phase polycrystalline ingots using the phase relationship between CaSi2 and associated phases
Source abstract
Abstract
Abstract The phase relationship between CaSi2 and associated phases was studied in order to fabricate CaSi2 single-phase polycrystalline ingots. The phase diagram of the Ca–Si binary system around CaSi2 (CaxSi2; 0.9 ⩽ x ⩽ 1.1) was obtained by identifying the phases in samples of varying composition and differential thermal analysis of the phase transitions. CaSi2 was treated as an incongruent-melting material that precipitates through two peritectic reactions, namely CaSi + liquid → Ca14Si19 and Ca14Si19 + liquid → CaSi2, according to the currently accepted phase diagram. However, at the CaSi2 stoichiometric composition, the stable peritectic reaction Ca14Si19 + liquid → CaSi2 occurs only in the presence of impurities such as Ta, B or P. In contrast, CaSi + liquid → CaSi2 occurs as the metastable peritectic reaction in a high-purity melt. The undercooling required for CaSi2 precipitation is less than 5 °C. Therefore, single-phase CaSi2 could be produced from a high-purity stoichiometric CaSi2 melt with a small amount of undercooling, and a rod-like coupled structure of CaSi2 and CaSi phases formed by peritectic coupled growth in a high-purity Ca-rich ingot. The present study also investigates the fabrication process for CaSi2 single-phase polycrystalline ingots. These can be obtained by high-cooling-rate casting (1–100 °C min−1) of high-purity, stoichiometric CaSi2 melts using new Ta crucibles.
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Research context
OpenAlex topics: Semiconductor materials and interfaces · Silicon and Solar Cell Technologies · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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