Structures of dissociated 〈11¯00〉 dislocations and {11¯00} stacking faults of alumina (α-Al2O3)
Source abstract
Abstract
Abstract An alumina (α-Al2O3) bicrystal with a {1 1 ¯ 0 0}/〈1 1 2 ¯ 0〉 2° low-angle grain boundary was fabricated by diffusion bonding, and the grain boundary was observed by high-resolution transmission electron microscopy (HRTEM). It was found that 1/3〈1 1 ¯ 0 0〉 partial-dislocation triplets were periodically arrayed along the boundary. The atomic structure within the {1 1 ¯ 0 0} stacking faults in between the partial-dislocation triplets was determined by HRTEM combined with first-principles calculations. We discuss the stacking fault structures and their excess energies in detail.
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Research context
OpenAlex topics: Advanced ceramic materials synthesis · Microstructure and mechanical properties · Semiconductor materials and interfaces
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